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TYPICAL PERFORMANCE CURVES
APT40GP90J
E C
APT40GP90J
900V
POWER MOS 7 IGBT
(R)
E G
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
SO
2 T-
27
"UL Recognized"
ISOTOP
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
* SSOA Rated
G
C
E
All Ratings: TC = 25C unless otherwise specified.
APT40GP90J UNIT
900 20 30 68 32 160 160A @ 900V 284 -55 to 150 300
Watts C Amps Volts
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
900 3 4.5 3.2 2.7 250
A nA
5-2004 050-7481 Rev A
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C)
2 2
Volts
I CES I GES
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
1000 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT40GP90J
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 450V I C = 40A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 40A
4 5
MIN
TYP
MAX
UNIT pF V nC A
3300 325 35 7.5 145 22 55 160 16 27 75 60 TBD 1415 825 16 27 110 105 TBD 2370 1505 J
ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 600V VGE = 15V I C = 40A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode)
66
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.44 N/A 21.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7481 Rev A
5-2004
TYPICAL PERFORMANCE CURVES
160 140
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
160 140
IC, COLLECTOR CURRENT (A)
APT40GP90J
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
120 100 80 60 40 20 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) TC = 125C TC = 25C TC = -50C
120 100 TC = 25C 80 60 40 20 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 40A TJ = 25C
TC = 125C TC = -50C
FIGURE 1, Output Characteristics(VGE = 15V) 200
VGE, GATE-TO-EMITTER VOLTAGE (V)
180
IC, COLLECTOR CURRENT (A)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE = 720V
160 140 120 100 80 60 40 20 0 0 TJ = -55C TJ = 25C TJ = 125C 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE = 180V VCE = 450V
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 80A 4 IC = 40A 3 IC = 20A 2
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5 IC = 80A 4 IC = 40A 3 IC = 20A
2
1
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
0
6
0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 100 90
0 -55
-25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.05
80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
5-2004 050-7481 Rev A
1.00
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
25
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
120 100 80 60 40 20 0
VCE = 600V RG = 5 L = 100 H VGE =15V,TJ=25C
APT40GP90J
20 VGE = 15V 15
VGE =15V,TJ=125C
10
5
10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 60 50 40 30 20
TJ = 25 or 125C,VGE = 15V RG = 5, L = 100H, VCE = 600V
0
VCE = 600V TJ = 25C, TJ =125C RG = 5 L = 100 H
10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 600V VGE = +15V RG = 5
RG = 5, L = 100H, VCE = 600V
tr, RISE TIME (ns)
tf, FALL TIME (ns)
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
10 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000
EON2, TURN ON ENERGY LOSS (J)
VCE = 600V VGE = +15V RG = 5
0
0
5000 4000 3000 2000 1000
3000 2500 2000 1500 1000 500 0
TJ = 125C, VGE = 15V
TJ = 125C,VGE =15V
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V TJ = 125C
0
10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000
VCE = 600V VGE = +15V RG = 5
SWITCHING ENERGY LOSSES (J)
7000 6000 5000 4000 3000 2000 1000 0
Eon2, 80A 5000 4000
Eon2, 80A Eoff, 80A 3000 2000 1000 0
Eoff, 80A Eon2, 40A
5-2004
Eoff, 40A Eon2, 20A Eoff, 20A 0
Eon2, 40A Eon2, 20A
Eoff, 40A
050-7481 Rev A
Eoff, 20A 0
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
7,000
IC, COLLECTOR CURRENT (A)
180 Cies 160 140 120 100 80 60 40 20
APT40GP90J
C, CAPACITANCE ( F)
1,000 500 Coes 100 50 Cres 10
P
10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
0
0.50
ZJC, THERMAL IMPEDANCE (C/W)
0.40
0.9
0.7 0.30 0.5 0.20 0.3 0.10 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
RC MODEL Junction temp (C) 0.0966 0.00997F
140
FMAX, OPERATING FREQUENCY (kHz)
50
Power (watts)
0.228
0.0158F
Fmax = min(f max1 , f max 2 )
10 5
TJ = 125C TC = 75C D = 50 % VCE = 600V RG = 5
f max1 = f max 2 = Pdiss =
0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
0.116 Case temperature(C)
1.96F
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
TJ - TC R JC
10
050-7481 Rev A
5-2004
APT40GP90J
APT30DF100
10%
Gate Voltage TJ = 125C
td(on)
Drain Current
V CC
IC
V CE
tr DrainVoltage 5% 90% 10%
Switching Energy
5%
A D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% DrainVoltage Gate Voltage td(off) 90% TJ = 125C
*DRIVER SAME TYPE AS D.U.T.
A V CE 100uH IC V CLAMP B
tf 10% 0
A DRIVER* D.U.T.
Drain Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
1.95 (.077) 2.14 (.084)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
5-2004
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
050-7481 Rev A
* Emitter
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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